By Norman G. Einspruch,Norman Einspruch
Comprised of 8 chapters, this quantity starts off with a common photograph of MOS expertise improvement from the machine and processing issues of view. The serious factor of hot-carrier results is mentioned, besides the machine engineering features of this challenge; the rising low-temperature MOS know-how; and the matter of latchup in scaled MOS circuits. a number of gadget versions which are compatible to be used in circuit simulators also are defined. The final bankruptcy examines novel electron shipping results saw in ultra-small MOS constructions.
This publication should still end up beneficial to semiconductor engineers excited about various elements of MOS expertise improvement, in addition to for researchers during this box and scholars of the corresponding disciplines.
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Extra resources for Advanced MOS Device Physics: 18 (V L S I Electronics)
Advanced MOS Device Physics: 18 (V L S I Electronics) by Norman G. Einspruch,Norman Einspruch